AMCOM成立于1996年12月,由一群在微波电路设计和微波器件制造技术方面经验丰富的微波设计师组成。它位于美国马里兰州盖瑟斯堡,距离华盛顿特区西北约20英里。该公司已经赢得了领先的微波设计组织的声誉,包括功率FET、MMIC功率放大器,以及带有射频和直流连接器的高功率放大器模块,可用于微波系统。我们的专业产品之一是大功率、宽带、高效功率放大器。
AMCOM拥有制造最先进产品的所有专业知识、人力、空间和设备。我们的一些能力包括:有源器件设计、MMIC设计和功率放大器模块设计。此外,我们还负责测试射频/微波集成电路组件。对于有源器件,我们要么采购诸如硅LDMOS或GaN-HEMT之类的部件,要么使用半导体铸造厂制造我们自己的专利器件/MMIC。
AMCOM的专长之一是根据客户的特殊需求定制MMIC和模块。定制产品包括所有前端组件,如低噪声放大器、功率放大器、开关、衰减器、移相器和上/下转换器。我们尽一切努力满足客户的性能要求,包括尺寸和重量。
AMCOM拥有一支专业的客户支持团队,并以其为客户确定经济高效解决方案的传统而自豪。请与我们联系您的微波元件需求。
射频三极管 RF Transistors | ||||||
AN100 | Handling and Mounting of Packaged FET - QG series | |||||
AN136 | Amplifier Design Example - using Power FET AM036MX-QG-R | |||||
AN148 | Amplifier Design Example - using Power FET AM048MX-QG-R | |||||
AN200 | Handling and Mounting of Packaged FET - QF series | |||||
AN400 | Handling and Mounting of Packaged FET - CU series | |||||
序号 | Part Number | Gss | P1dB | Eff@P1dB | IP3 | |
1 | AM006MX-QG-R | 13dB | 22.0dBm | 42% | 34dBm | |
2 | AM012MX-QG-R | 13.5dB | 25.0dBm | 42% | 37dBm | |
3 | AM024MX-QG-R | 13dB | 28.0dBm | 42% | 39dBm | |
4 | AM036MX-QG-R | 12dB | 29.5dBm | 42% | 42dBm | |
5 | AM048MX-QG-R | 11dB | 31.0dBm | 42% | 43dBm | |
6 | AM006MX-QF-R | 13dB | 23.5dBm | 42% | 35dBm | |
7 | AM012MX-QF-R | 13dB | 26.5dBm | 42% | 37dBm | |
8 | AM024MX-QF-R | 13dB | 29.5dBm | 42% | 40dBm | |
9 | AM036MX-QF-R | 12dB | 31.0dBm | 42% | 42dBm | |
10 | AM048MX-QF-R | 11dB | 32.5dBm | 42% | 44dBm | |
11 | AM072MX-QF-R | 11dB | 34.0dBm | 42% | 44dBm | |
12 | AM048MX-89-R | 9dB | 31dBm | 42% | 43dBm | |
13 | AM072MX-CU-R | 11dB | 34.0dBm | 40% | 46dBm | |
14 | AM100MX-CU-R | 10dB | 35.0dBm | 37% | 48dBm | |
15 | AM150MX-CU-R | 10dB | 36.5dBm | 37% | 50dBm | |
16 | AM200MX-CU-R | 10dB | 38.0dBm | 35% | 48dBm | |
17 | AM300MX-CU-R | 9dB | 39.5dBm | 30% | 52dBm | |
18 | AM005WX-BH-R | 16dB | 25.0dBm | 55% | 37dBm | |
19 | AM010WX-BH-R | 14dB | 29.8dBm | 50% | 38.5dBm | |
20 | AM030WX-BH-R | 10.8dB | 34dBm | 49% | 42dBm | |
21 | AM060WX-BI-R | 8V | 12dB | 35.5dBm | 47dBm | |
HiFET Transistors | ||||||
Application Notes | ||||||
AN900 | Handling and mounting of BI packaged high voltage GaAs FET | |||||
Part Number | Bias | Gain | P1dB | IP3 | ||
AM005MH2-BI-R | 14V | 15dB | 25dBm | 40dBm | ||
AM010MH2-BI-R | 14V | 15dB | 28dBm | 43dBm | ||
AM020MH2-BI-R | 14V | 15dB | 31dBm | 46dBm | ||
AM020WH2-BI-R | 14V | 14.6dB | 33dBm | 46dBm | ||
AM010MH4-BI-R | 28V | 19dB | 31dBm | 46dBm | ||
AM030MH4-BI-R | 28V | 19dB | 36dBm | 49dBm | ||
AM030WH2-BI-R | 16V | 16.7dB | 35dBm | 46dBm | ||
AM030WH4-BI-R | 28V | 19dB | 37dBm | 49dBm | ||
AM032MH4-BI-R | 28V | 19dB | 36dBm | 49dBm | ||
AM120MH2-BI-R | 14V | 15dB | 39dBm | 50dBm |
MMICs | ||||||||||
Application Notes | ||||||||||
AN700 | Handling & mounting - BM Package Assemply on PC Board | |||||||||
Model | Frequency(GHz) | Gss(dB)小信号 增益 | P1dB(dBm)输出功率在 1 db 压缩 | IP3(dBm) 三阶拦截点 | Eff(%)效率 | Vd(v)电压 | Vg 负电压 | |||
AM003536WM-XX-R | 0.01-3.5GHz | 23dB | 35dBm | 48dBm | 0.2 | 20V | -1 | |||
AM008030WM-XX-R | 0.05-10GHz | 18dB | 30dBm | 48dBm | 0.2 | 12V | -0.7 | |||
AM009023WM-XX-R | 0.05-9GHz | 22dB | 23dBm | 30dBm | 0.2 | 12V | -0.65 | |||
AM011037WM-XX-R | 0.1-1.0GHz | 30dB | 37dBm | 45dBm | 0.4 | 8V | -0.66 | |||
AM012020WM-XX-R | 0.10-2.0GHz | 30dB | 16dBm | NF=2dB | -- | 8V | -1.2 | |||
AM012535MM-XX-R | 0.03-2.5GHz | 23dB | 33dBm | 45dBm | 0.2 | 20V | -2.8 | |||
AM08011039WM-SN-R | 8-11GHz | 28dB | 39dBm | 46dBm | 0.2 | 8V | -1.8 | |||
AM08011041WM-SN-R | 8-11GHz | 28dB | 39dBm | 48dBm | 0.25 | 8V | -1.8 | |||
AM103026MM-XX-R | 0.9-3.2GHz | 22dB | 25dBm | 43dBm | 0.1 | 14V | -2 | |||
AM132740MM-XX-R | 1.3-2.7GHz | 26dB | 38dBm | 51dBm | 0.3 | 14V | -0.6 | |||
AM142540MM-XX-R | 1.4-1.8GHz | 25dB | 39dBm | 50dBm | 0.35 | 14V | -0.86 | |||
AM143440WM-XX-R | 1.4-3.4GHz | 20dB | 38.5dBm | 48dBm | 0.35 | 12V | -0.9 | |||
AM153040WM-XX-R | 1.4-3.4GHz | 18dB | 37dBm | 43dBm | 0.3 | 12V | -0.9 | |||
AM153540WM-XX-R | 1.5-3.5GHz | 18dB | 39dBm | 48dBm | 0.35 | 14V | -0.95 | |||
AM183031WM-XX-R | 1.6-3.3GHz | 31.5dB | 31.5dBm | 40dBm | 0.25 | 8V | -1 | |||
AM184635WM-XX-R | 1.8-4.6GHz | 30dB | 35dBm | - | 0.25 | 7V | -0.75 | |||
AM204437WM-XX-R | 2.0-4.4GHz | 30dB | 37dBm | NA | 0.25 | 8V | -0.76 | |||
AM244236WM-XX-R | 2.4-4.2GHz | 31dB | 36dBm | NA | 0.3 | 8V | -0.76 | |||
AM254038WM-XX-R | 2.5-4.0GHz | 18dB | 38dBm | 45dBm | 0.35 | 12V | -0.9 | |||
AM254540WM-XX-R | 2.5-4.5GHz | 17dB | 38dBm | 45dBm | 0.35 | 12V | -0.9 | |||
AM264240WM-XX-R | 2.6-4.2GHz | 20dB | 39dBm | 50dBm | 0.35 | 14V | -0.95 | |||
AM284233MM-XX-R | 2.8-4.2GHz | 34dB | 33dBm | 40dBm | 0.25 | 8V | -0.7 | |||
AM304031WM-XX-R | 2.6-4.6GHz | 31dB | 32dBm | 39dBm | 0.25 | 8V | -0.7 | |||
AM324036WM-XX-R | 3.0-4.2GHz | 29dB | 36dBm | 45dBm | 0.25 | 8V | -0.7 | |||
AM13714530WM-SM-R | 13.75-14.5GHz | 30dB | 30dBm | 40dBm | 0.15 | 8V | -0.8 | |||
[Note 1]: XX is BM or FM [Note 2]: Gss is small signal gain, P1dB is output power at 1dB compression, IP3 is 3rd order intercept point, Eff is efficiency, Vd is positive voltage, Vg is negative voltage [Note 3]: Size of BM package: 0.7 x 0.7 x 0.1 inch [Note 4]: See data sheet for FM package dimension. All our MMICs are RoHs compliant |
Hybrid Modules 混合模块 | ||||||||
Model | Freq(MHz) | Gain(dB) | P1dB(W) | IP3(dBm) | Eff(%) | Vd | Vg | Size(inch) |
AM000551SF-2H | 30-500 | 26 | 125 | NA | 30 | 28V | None | 8.8x1.5x0.91 |
AM003040SF-2H | 10-3000 | 22 | 10 | 50 | 22 | 24V | None | 6.0x4.0x0.66 |
AM003040SF-4H | 50-3000 | 43 | 41 | 55 | 18 | 24V | None | 6.0x3.6x0.66 |
AM003536SF-2H | 100-3500 | 22 | 4 | 49 | 20 | 24V | None | 2.8x2.0x0.56 |
AM003536SF-2H-S | 5-3500 | 22 | 4 | 46 | 20 | 24V | None | 2.8x2.0x0.56 |
AM020336SF-4H | 175-325 | 60 | 4 | 46 | 45 | 8V | None | 3.15x2.15x0.49 |
AM042644SF-3H | 300-2600 | 35 | 20 | 50 | 33 | 28V | None | 4.72x2.56x0.98 |
AM053231SF-3H | 500-3500 | 20 | 1.6 | NA | 10 | 15V | -5 | 4.0x3.0x0.75 |
AM091247SF-2H | 900-1300 | 20 | 30 | NA | 25 | 31, 7 | -5 | 8.63x3.0x1.12 |
AM091251SF-1H | 900-1300 | 10 | 100* | NA | 30 | 31V | None | 8.8x3.5x0.91 |
AM091253SF-2H | 950-1250 | 20 | 200* | NA | 25 | 31V | None | 14.76x6x1.12 |
AM091257SF-6H | 950-1250 | 70 | 500W* | NA | NA | 208V AC | None | 24x30 |
AM094233SF-3H | 900-4200 | 19 | 1.6 | NA | 10 | 15V | -5 | 4.0x3.0x0.75 |
AM141940SF-2H | 1400-1800 | 25 | 5.5 | 50 | 20 | 16V | None | 2.8x2.0x0.56 |
AM183031SF-3H | 1800-3400 | 31 | 1.25 | 38 | 12 | 12V | None | 2.8x2.0x0.56 |
AM203043SF-4H | 2000-3000 | 37 | 15 | 50 | 15 | 15V | None | 7.5x3.2x0.55 |
AM204437SF-3H | 2000-4400 | 30 | 4 | 44 | 15 | 12V | None | 2.8x2.0x0.56 |
AM232537SF-2H T/R Module | 2100-2600 | TX:22 RX:16 NF:1.5 | 5 | N/A | 20 | 14V | None | 2.8x3.0x0.56 |
AM243638SF-4H | 2400-3600 | 37 | 6.3 | 45 | 25 | 13V | None | 4.0x2.5x0.56 |
AM273545SF-6H | 2500-4000 | 50 | 30 | 53 | 19 | 12V | None | 8x4.75x1.0 |
AM304031SF-3H | 2600-4600 | 29 | 1.25 | 37 | 12 | 12V | None | 2.8x2.0x0.56 |
AM324036SF-3H | 3000-4200 | 29 | 4 | 43 | 19 | 12V | None | 2.8x2.0x0.56 |
AM343635SF-2H | 3400-3600 | 18 | 4 | 45 | 27 | 7V | -2 | 2.8x1.5x0.61 |
Repeater T/R. 800-1900MHz, PCS/AMPS. See data sheet. * Denotes saturated output power **For detailed performance, see data sheet. Gain is small signal gain, P1dB is output power at 1dB compression, IP3 is 3rd-order intercept point, Eff is efficiency, Vd is positive voltage, Vg is negative voltage |
联系人:黄小姐
电 话 : 0755-83040896
邮 箱: info@pansilicon.com
公 司:深圳市赛矽电子有限公司
地 址: 深圳市龙岗区吉政路吉安创意园B503室