CT817

Features 

 High isolation 5000 VRMS

 CTR flexibility available see order information

 DC input with transistor output

 External Creepage ≥ 7.4mm 

 Distance Through Isolation ≥ 0.4mm

 Spatial Distance ≥ 7.5mm (S/SL Type)

 Spatial Distance ≥ 8.0mm (M/SLM Type)

 Operating Temperature range - 55 °C to 110 °C

 Regulatory Approvals

 UL - UL1577 (E364000)

 VDE - EN60747-5-5(VDE0884-5)

 CQC – GB4943.1, GB8898

 IEC60065, IEC60950

Description

The CT817 series consists of a photo transistor 

optically coupled to a gallium arsenide Infraredemitting diode in a 4-lead DIP package different lead 

forming options.

Applications 

 Switch mode power supplies

 Computer peripheral interface

 Microprocessor system interface