H11B1

Features 

• High isolation 5000 VRMS

• Patented coplanar structure DMC-Isolator®

• DC input with transistor output

• Temperature range - 55 °C to 100 °C

• External Creepage ≥ 7.4mm 

• Distance Through Isolation ≥ 0.4mm

• Spatial Distance ≥ 7.5mm (S/SL Type)

• Spatial Distance ≥ 8.0mm (M Type)

• RoHS and REACH Compliance

• Halogen Free Compliance (Optional)

• Regulatory Approvals

✓ UL - UL1577 (E364000)

✓ VDE - EN60747-5-5(VDE0884-5)

✓ CQC – GB4943.1, GB8898 (14001105802)

✓ IEC62368 (FI/41119)

Description

The 4N29, 4N30, 4N31, 4N32, 4N33, H11B1, H11B2, 

H11B3, H11B255, and TIL113 series consist of a 

photodarlington transistor optically coupled to an

Infrared-emitting diode in a 6-lead DIP DMC-Isolator®

package with different lead forming options. 

Applications 

• Switch mode power supplies

• Computer peripheral interface

• Microprocessor system interface