CT852

Features 

 High isolation 5000 VRMS

 CTR : Min 1000%

 High BVCEO = 350V

 RoHS Compliance

 REACH Compliance

 External Creepage ≥ 7.4mm 

 Distance Through Isolation ≥ 0.4mm

 Spatial Distance ≥ 7.5mm (S/SL Type)

 Spatial Distance ≥ 8.0mm (M/SLM Type)

 Regulatory Approvals

 UL - UL1577 (E364000)

 VDE - EN60747-5-5(VDE0884-5)

 CQC – GB4943.1, GB8898

 IEC60065, IEC60950

Description

The CT852 consists of a high power photodarlington

transistor optically coupled to a gallium arsenide 

Infrared-emitting diode in a 4-lead DIP package 

different lead forming options.

Applications 

 Switch mode power supplies

 Computer peripheral interface

 Microprocessor system interface