6N136

Features 

 High speed 1MBit/s 

 High isolation voltage between input and output 

(Viso=5000 Vrms ) 

 Guaranteed CTR performance from 0°C to 70°C

 Wide operating temperature range of -55°C to 

100°C 

 Regulatory Approvals

 UL - UL1577 (E364000)

 VDE - EN60747-5-5(VDE0884-5)

 CQC – GB4943.1, GB8898

 IEC60065, IEC60950

Applications 

 Line receivers 

 Telecommunication equipment 

 High speed logic ground isolation 

 Feedback loop in switch-mode power supplies

 Home appliances

Description

The 6N135, 6N136, CT4502 and CT4503 devices 

each consist of an infrared emitting diode, optically 

coupled to a high speed photo detector transistor. A 

separate connection for the photodiode bias and 

output-transistor collector increase the speed by 

several orders of magnitude over conventional 

phototransistor couplers by reducing the 

base-collector capacitance of the input transistor. 

The devices are packaged in an 8-pin DIP package 

and also available in gullwing (400mil) and surface 

mount lead forming.