CTH4803NS-T52

Features 

 Drain-Source Breakdown Voltage VDSS 30V

 Drain-Source On-Resistance

RDS(ON) 6.5m, at VGS= 10V, ID= 30A

RDS(ON) 10m, at VGS= 4.5V, ID= 20A

 Continuous Drain Current at TC=25℃, ID =48A

 Advanced high cell density Trench Technology

 RoHS Compliance & Halogen Free

Applications 

 Switching Applications

 Motor Drivers

 Relay Drivers

Description

These Power MOSFETs utilizes Advanced Trench 

Process Technology which comes with High 

Density Cell Design for Ultra Low RDS(ON).

The device exhibits rugged avalanche 

characteristics and guaranteed to withstand a 

stipulated level of energy in the breakdown mode.