CTH2506NS-T52

Features 

 Drain-Source Breakdown Voltage VDSS 60V

 Drain-Source On-Resistance

RDS(ON) 27m, at VGS= 10V, ID= 20A

RDS(ON) 34m, at VGS= 4.5V, ID= 16A

 Continuous Drain Current at TC=25℃ID =27.6A

 Advanced high cell density Trench Technology

 RoHS Compliance & Halogen Free

Applications 

 DC/DC Converter 

 Power Management 

 Load Switch

Description

The CTH2506NS-T52 is the N-Channel logic 

enhancement mode power field effect transistors 

are produced using high cell density, DMOS trench 

technology. This high density process is especially 

tailored to minimize on-state resistance. These 

devices are particularly suited for low voltage 

application.