CTH6203PS-T52

Features 

 Drain-Source Breakdown Voltage VDSS-30V

 Drain-Source On-Resistance

RDS(ON) 5.2m, at VGS= -20V, ID= -20A

RDS(ON) 6m, at VGS= -10V, ID= -20A

 Continuous Drain Current at TC=25℃,ID =-62A

 Advanced high cell density Trench Technology

 RoHS Compliance & Halogen Free

Applications 

 Load Switch

 DC/DC Converter 

 Battery Powered System

Description

The CTH6203PS-T52 is the P-Channel logic 

enhancement mode power field effect transistors 

are produced using high cell density, DMOS trench 

technology. This high density process is especially 

tailored to minimize on-state resistance. These 

devices are particularly suited for low voltage 

application such as cellular phone and notebook 

computer power management and other battery 

powered circuits , and low in-line power loss are 

needed in a very small outline surface mount 

package.