CTH3603PS-T52

Features 

 Drain-Source Breakdown Voltage VDSS-30V

 Drain-Source On-Resistance

RDS(ON) 16m, at VGS= -10V, ID= -11A

RDS(ON) 25m, at VGS= -5.0V, ID= -9A

 Continuous Drain Current at TC=25℃ID =-36.7A

 Advanced high cell density Trench Technology

 RoHS Compliance & Halogen Free

Applications 

 Load Switch

 DC/DC Converter 

 Battery Powered System

Description

The CTH3603PS-T52 is the P-Channel logic 

enhancement mode power field effect transistors 

are produced using high cell density, DMOS trench 

technology. This high density process is especially 

tailored to minimize on-state resistance.