CTL0343NS-R3

Features 

 Drain-Source Breakdown Voltage VDSS -20 V

 Drain-Source On-Resistance

RDS(ON) 58m, at VGS= 10V, ID= 3.4A

RDS(ON) 66m, at VGS= 4.5V, ID= 2.7A

RDS(ON) 88m, at VGS= 2.5V, ID= 1.0A

 Continuous Drain Current at TC=25℃ID = -3.1A

 Advanced high cell density Trench Technology

 RoHS Compliance & Halogen Free

Applications 

 Power Management

 Lithium Ion Battery

Description

The CTL0343NS-R3 is the N-Channel logic enhancement 

mode power field effect transistors are produced using 

high cell density, DMOS trench technology. This high 

density process is especially tailored to minimize on-state 

resistance. These devices are particularly suited for low 

voltage application such as cellular phone and notebook

computer power management and other battery powered 

circuits where low in-line power loss are needed in a very 

small outline surface mount package.