CTL0233NS-R3

Features 

• Drain-Source Breakdown Voltage VDSS 30 V

• Drain-Source On-Resistance 

RDS(ON) 92mΩ, at VGS= 10V, ID= 2.5A

RDS(ON) 142mΩ, at VGS= 4.5V, ID= 2.0A

• Continuous Drain Current at TA=25℃ ID = 2.3A

• Advanced high cell density Trench Technology 

• RoHS Compliance & Halogen Free 

Applications 

• Power Management

• Lithium Ion Battery

• LCD Display inverter 

• Load Switch 

Description 

The CTL0233NS-R3 is the N-Channel logic enhancement

mode power field effect transistors, using high cell 

density, DMOS trench technology. 

This high density process is especially tailored to

minimize on-state resistance.