CTL0025NS-R3

Features 

• Drain-Source Breakdown Voltage VDSS 50 V

• Drain-Source On-Resistance 

RDS(ON) 1.3Ω, at VGS= 10V, ID= 0.2A

RDS(ON) 1.4Ω, at VGS= 5V, ID= 0.2A

RDS(ON) 1.6Ω, at VGS= 2.5V, ID= 0.2A

• Continuous Drain Current at TA=25℃ ID = 0.2A

• Advanced high cell density Trench Technology 

• RoHS Compliance & Halogen Free 

Applications 

• Switches 

• Motor controls 

• Converters 

• Power supply circuits 

Description 

The CTL0025NS-R3 is the N-Channel logic enhancement

mode power field effect transistors are produced using 

high cell density, DMOS trench technology. This high 

density process is especially tailored to minimize on-state 

resistance.