CTL0266NS-R3

Features 

 Drain-Source Breakdown Voltage VDSS -20 V

 Drain-Source On-Resistance

RDS(ON) 82m, at VGS= 10V, ID= 2.6A

RDS(ON) 96m, at VGS= 4.5V, ID= 2.1A

 Continuous Drain Current at TC=25℃ID = 2.6A

 Advanced high cell density Trench Technology

 RoHS Compliance & Halogen Free

Applications 

 Power Management

 Lithium Ion Battery

Description

The CTL0266NS-R3 is the N-Channel logic 

enhancement mode power field effect transistors 

are produced using high cell density, DMOS 

trench technology. This high density process is 

especially tailored to minimize on-state resistance. 

These devices are particularly suited for low 

voltage application such as cellular phone and 

notebook computer power management and other 

battery powered circuits where high-side switching 

and low in-line power loss are needed in a very 

small outline surface mount package.