CTL0402PS-R3

Features 

 Drain-Source Breakdown Voltage VDSS -20 V

 Drain-Source On-Resistance

RDS(ON) 52m, at VGS= -10V, ID= -4.2A

RDS(ON) 60m, at VGS= -4.5V, ID= -3.4A

RDS(ON) 70m, at VGS= -2.5V, ID= -2.5A

RDS(ON) 90m, at VGS= -1.8V, ID= -1.7A

 Continuous Drain Current at TC=25℃ID = -4.0A

 Advanced high cell density Trench Technology

 RoHS Compliance & Halogen Free

Applications 

 Power Management

 Lithium Ion Battery

Description

The CTL0402PS-R3 is the P-Channel logic enhancement 

mode power field effect transistors are produced using 

high cell density, DMOS trench technology. This high 

density process is especially tailored to minimize on-state 

resistance. These devices are particularly suited for low 

voltage application such as cellular phone and notebook 

computer power management and other battery powered 

circuits where high-side switching, and low in-line power 

loss are needed in a very small outline surface mount 

package.