CTL0322PS-R3

Features 

• Drain-Source Breakdown Voltage VDSS -20 V

• Drain-Source On-Resistance 

RDS(ON) 55mΩ, at VGS= -4.5V, ID= -3.2A

RDS(ON) 70mΩ, at VGS= -2.5V, ID= -2.4A

RDS(ON) 100mΩ, at VGS= -1.8V, ID= -1.7A

• Continuous Drain Current at TA=25℃ ID = -3.2A

• Advanced high cell density Trench Technology 

• RoHS Compliance & Halogen Free 

Applications 

• Power Management

• Lithium Ion Battery

• High-Side Switching 

Description 

The CTL0322PS-R3 is the P-Channel logic enhancement 

mode power field effect transistors are produced using 

high cell density, DMOS trench technology. This high

density process is especially tailored to minimize on-state 

resistance.