CTL0203PS-R3

Features 

• Drain-Source Breakdown Voltage VDSS -30 V

• Drain-Source On-Resistance 

RDS(ON) 160mΩ, at VGS= -4.5V, ID= -1.6A

RDS(ON) 110mΩ, at VGS= -10V, ID= -2.0A

• Continuous Drain Current at TA=25℃ ID = -2.0A

• Advanced high cell density Trench Technology 

• RoHS Compliance & Halogen Free 

Applications 

• Power Management 

• Portable Equipment 

• Battery Powered System 

• Load Switch 

Description 

The CTL0203PS-R3 is the P-Channel logic enhancement 

mode power field effect transistors are produced using 

high cell density, DMOS trench technology. This high

density process is especially tailored to minimize on-state 

resistance. These devices are particularly suited for low 

voltage application such as cellular phone and notebook 

computer power management.