CTL0196PS-R3

Features 

• Drain-Source Breakdown Voltage VDSS -60 V

• Drain-Source On-Resistance 

RDS(ON) 170mΩ, at VGS= -10V, ID= -1.8A

RDS(ON) 200mΩ, at VGS= -4.5V, ID= -1.4A

• Continuous Drain Current at TC=25℃ ID = -1.9A

• Advanced high cell density Trench Technology 

• RoHS Compliance & Halogen Free 

Description 

The CTL0196PS-R3 is the P-Channel logic enhancement 

mode power field effect transistors are produced using 

high cell density, DMOS trench technology. This high

density process is especially tailored to minimize on-state 

resistance. 

Applications 

• Power Management

• Battery Powered System 

• DC/DC Converter 

• Load Switch 

• DSC 

• LCD Display inverter