GD55WB512ME

FEATURES

◆ 512M-bit Serial Flash ◆ Fast Program/Erase Speed

 - 64M-Byte - Page Program time: 0.5ms typical

 - 256 Bytes per programmable page - Sector Erase time: 70ms typical

 - Block Erase time: 0.25s/0.4s typical

◆ Standard, Dual, Quad SPI - Chip Erase time: 280s typical

 - Standard SPI: SCLK, CS#, SI, SO, RESET#

 - Dual SPI: SCLK, CS#, IO0, IO1, RESET# ◆ Flexible Architecture

 - Quad SPI: SCLK, CS#, IO0, IO1, IO2, IO3, RESET# - Uniform Sector of 4K-Byte

 - 3 or 4-Byte Address Mode - Uniform Block of 32/64K-Byte

◆ High Speed Clock Frequency ◆ Low Power Consumption

 - 104MHz for fast read - 35μA typical standby current

 - Dual I/O Data transfer up to 208Mbits/s - 2μA typical deep power down current

 - Quad I/O Data transfer up to 416Mbits/s

◆ Advanced Security Features

◆ Software Write Protection - 128-bit Unique ID for each device

 - Write protect all/portion of memory via software - Serial Flash Discoverable parameters (SFDP) register

 - Top/Bottom Block protection - 3x2048-Byte Security Registers With OTP Locks

◆ Endurance and Data Retention ◆ Single Power Supply Voltage

 - Minimum 100,000 Program/Erase Cycles - Full voltage range: 1.65-3.6V

 - 20-year data retention typical

◆ Package Information

◆ Allows XiP (eXecute In Place) Operation - SOP16 300mil

 - High speed Read reduce overall XiP instruction fetch time - WSON8 (6x5mm)

 - Continuous Read with Wrap further reduce data latency to - WSON8 (8x6mm)

 fill up SoC cache - TFBGA-24ball (5x5 Ball Array)

GENERAL DESCRIPTIONS

The GD55WB512ME (512M-bit) Serial flash supports the standard Serial Peripheral Interface (SPI), and the Dual/Quad 

SPI: Serial Clock, Chip Select, Serial Data I/O0 (SI), I/O1 (SO), I/O2, I/O3. The Dual I/O data is transferred with speed of 

208Mbit/s, and the Quad I/O data is transferred with speed of 416Mbit/s.