GD9FS1GxF3A

FEATURES

◆ Single level cell technology ◆ Operating Current

- Read(25ns cycle): 15mA

◆ ONFI 1.0 Compatible - Program(Typ): 15mA

- Erase(Typ): 15mA

◆ Power Supply Voltage - Standby(Max):50uA (CMOS)

- VCC= 1.7 ~ 1.95v (GD9FS)

- VCC = 2.7 ~ 3.6v (GD9FU) ◆ Reliability

- P/E cycles with ECC: 100K

◆ Memory Cell Organization - Data retention: 10 Years 

- Page size: 

X8: 2K + 64bytes ◆ ECC Requirement

X16: 1K + 32words - 4bit/512 bytes

- Block size: 

X8: 128K + 4K bytes ◆ Operating Temperature

X16: 64K + 2K words - Industrial: -40C ~ 85C

- Plane size: 1024 blocks - Industrial: -40C ~ 105C

- Device size: 1024 blocks

◆ Chip Enable Don’t Care Option

◆ Page Read / Program time

- Random Read Time (tR): 25us Max. ◆ Security

- Sequential Access Time - OTP area

3.3v Device: 25ns Min. - Non-volatile protection

1.8v Device:45ns Min.

- Page Program(tPROG): 300us Typ. ◆ Package

- TSOPI 48 (12mm x 20mm)

◆ Block Erase - FBGA63 (9mm x 11mm)

- Block Erase Time(tBERS): 3ms Typ. - FBGA48 (6mm x 8mm)

◆ Number of Valid Blocks

- Min 1004 blocks

- Max 1024 blocks

GENERAL DESCRIPTION

GigaDevice GD9Fx1G8F3A and GD9Fx1G6F3A are 1Gbit with spare 32Mbit capacity. A program operation can be 

performed in typical tPROG on the 2112-byte page and an erase operation can be performed in typical tBERS on a 

128K+4K-bytes block. Data in the data page can be read out at tRC cycle time per byte. The I/O pins serve as the ports 

for address and data input/output as well as command input. The on-chip write controller automates all program and erase 

functions including pulse repetition, where required, and internal verification and margining of data. GD9Fx1G8F3A and 

GD9Fx1G6F3A′s provide extended reliability of 100K program/erase cycles with ECC (Error Correcting Code).