GD9FS1G8F2D

FEATURES

◆ Single level cell technology ◆ Operating Current

- Read(Typ): 15mA

◆ ONFI 1.0 Compatible - Program(Typ): 15mA

- Erase(Typ): 15mA

◆ Power Supply Voltage - Standby(Max):50uA (CMOS)

- VCC/VCCQ = 1.7 ~ 1.95v(GD9FS)

- VCC/VCCQ = 2.7 ~ 3.6v (GD9FU) ◆ Reliability

- P/E cycles with ECC: 50K 

◆ Memory Cell Organization - Data retention: 10 Years 

- Page size: 

X8: 2K + 128bytes ◆ ECC Requirement

- Block size: 64 pages - 8bit/512 bytes

X8: 128K + 8K bytes

- Plane size: 1024 blocks ◆ Operating Temperature

- Device size: 1024blocks - Industrial: -40C ~ 85C

◆ Page Read / Program time ◆ Chip Enable Don’t Care Option

- Random Read Time (tR): 25us Max.

- Sequential Access Time ◆ Security

3.3v Device: 12ns Min. - UID

1.8v Device: 20ns Min. - OTP Area

- Page Program (tPROG): 300us Typ.

◆ Package

◆ Block Erase - TSOP48 12mm x 20mm

- Block Erase Time (tBERS): 3ms Typ. - FBGA63 9mm x 11mm

- FBGA48 6mm x 8mm

GENERAL DESCRIPTION

GigaDevice GD9Fx1G8F2D is 1Gbit capacity. A program operation can be performed in typical tPROG on each page and 

an erase operation can be performed in typical tBERS on each block. Data in the page can be read out at tRC cycle time 

per byte. The I/O pins serve as the ports for address and data input/output as well as command input. GD9Fx1G8F2D

provides extended reliability of 50K program/erase cycles with ECC (Error Correcting Code).