GD9FS2GxF3A

FEATURES

◆ Single level cell technology ◆ Operating Current

- Read(25ns cycle): 15mA

◆ ONFI 1.0 Compatible - Program(Typ): 15mA

- Erase(Typ): 15mA

◆ Power Supply Voltage - Standby(Max):50uA (CMOS) for 85℃

- VCC = 1.7 ~ 1.95v(GD9FS)

- VCC = 2.7 ~ 3.6v (GD9FU) ◆ Reliability

- P/E cycles with ECC: 100K

◆ Memory Cell Organization - Data retention: 10 Years 

- Page size)

: 

X8: 2K + 64bytes

X16: 1K + 32words

◆ ECC Requirement

- 4bit/512bytes

- Block size: 64 pages

X8: 128K + 4K bytes ◆ Operating Temperature

X16: 64K + 2K words - Industrial: -40C ~ 85C

- Plane size: 1024 blocks - Industrial: -40C ~105C

- Device size: 2Gb: 2048 blocks

◆ Chip Enable Don’t Care Option

◆ Page Read / Program time

- Random Read Time (tR): 25us Max. ◆ Security

- Sequential Access Time - OTP area

3.3v Device: 20ns Min. - Protection with WP#

1.8v Device: 25ns Min. - UID

- Page Program(tPROG): 300us Typ.

◆ Package

◆ Block Erase - TSOP48 12mm x 20mm

- Block Erase Time(tBERS): 3ms Typ. - FBGA63 9mm x 11mm

- FBGA48 6mm x 8mm

◆ Advantage Feature

- cache read

- multi-plane operation

GENERAL DESCRIPTION

GigaDevice GD9Fx2GxF3A is 2Gbit with 64Mbit spare capacity. A program operation can be performed in typical tPROG

on each page and an erase operation can be performed in typical tBERS on each block. Data in the page can be read out 

at tRC cycle time per byte. The I/O pins serve as the ports for address and data input/output as well as command input. 

GD9Fx2GxF3A provides extended reliability of 100K program/erase cycles with ECC (Error Correcting Code).