GD9FS8GxE3A

FEATURES

◆ Single level cell technology ◆ Operating Current

- Read(Typ): 15mA

◆ ONFI 1.0 Compatible - Program(Typ): 15mA

- Erase(Typ): 15mA

◆ Power Supply Voltage - Standby(Max):50uA (CMOS)

- VCC = 1.7 ~ 1.95v(GD9FS)

- VCC = 2.7 ~ 3.6v (GD9FU) ◆ Reliability

- P/E cycles with ECC: 100K

◆ Memory Cell Organization - Data retention: 10 Years

- Page size: 

X8: 2K + 64bytes ◆ ECC Requirement

X16: 1K + 32words - 4bit/512 bytes

- Block size: 64 pages

X8: 128K + 4K bytes ◆ Operating Temperature

X16: 64K + 2K words - Industrial: -40C ~ 85C

- Plane size: 2048 blocks - Industrial: -40C ~ 105C

- Device size: 

4Gb: 4096 blocks ◆ Chip Enable Don’t Care Option

8Gb: 8192 blocks

16Gb: 16384 blocks ◆ Security

- OTP area

◆ Page Read / Program time - UID

- Random Read Time (tR): 25us Max.

- Sequential Access Time ◆ Package

3.3v Device: 20ns Min. - TSOPI48 12mm x 20mm

1.8v Device:25ns Min. - FBGA63 9mm x 11mm

- Page Program(tPROG): 300us Typ.

◆ Block Erase

- Block Erase Time(tBERS): 3ms Typ.

GENERAL DESCRIPTION

GigaDevice GD9Fx4GxF3A/GD9Fx8GxE3A/GD9FxAGxD3A is 4Gbit/8Gbit/16Gbit capacity. A program operation can be 

performed in typical tPROG on the whole page and an erase operation can be performed in typical tBERS on each block. 

Data in the page can be read out at tRC cycle time per byte. The I/O pins serve as the ports for address and data input/output 

as well as command input. GD9Fx4GxF3A/GD9Fx8GxE3A/GD9FxAGxD3A provides extended reliability of 100K 

program/erase cycles with ECC (Error Correcting Code).