GD9AS2GxF3A

FEATURES

◆ Single level cell technology ◆ Operating Current

- Read(25ns cycle): 15mA

◆ ONFI 1.0 Compatible - Program(Typ): 15mA

- Erase(Typ): 15mA

◆ Power Supply Voltage - Standby(Max):50uA (CMOS)

- VCC/VCCQ = 1.7 ~ 1.95v(GD9AS)

- VCC/VCCQ = 2.7 ~ 3.6v (GD9AU) ◆ Reliability

- P/E cycles with ECC: 100K

◆ Memory Cell Organization - Data retention: 10 Years 

- Page size: 

X8: 2K + 64bytes 

X16: 1K + 32words

◆ Internal ECC

- 4bit/528bytes

- Block size: 64 pages ◆ Operating Temperature

X8: 128K + 4K bytes - Industrial (I): -40℃ ~ 85℃

X16: 64K + 2K words

- Plane size: 1024 blocks ◆ Chip Enable Don’t Care Option

- Device size: 2Gb: 2048 blocks

◆ Security

◆ Page Read / Program time - OTP area

- Random Read Time (tR_ECC): 60us Max. - Protection with WP#

- Sequential Access Time - UID

3.3v Device: 20ns Min.

1.8v Device: 25ns Min. ◆ Package

- Page Program(tPROG_ECC): 400us Typ. - TSOP48 12mm x 20mm

- FBGA63 9mm x 11mm

◆ Block Erase - FBGA48 6mm x 8mm

- Block Erase Time(tBERS): 3ms Typ.

◆ Advantage Feature

- cache read 

- multi-plane operation

Note: 1. ECC on is default, which can enable/disable by user after power-on.

GENERAL DESCRIPTION

GigaDevice GD9Ax2GxF3A is 2Gbit with 64Mbit spare capacity. A program operation can be performed in typical tPROG

on the whole page and an erase operation can be performed in typical tBERS on each block. Data in the page can be read 

out at tRC cycle time per byte. The I/O pins serve as the ports for address and data input/output as well as command input. 

GD9Ax2GxF3A provides extended reliability of 100K program/erase cycles with ECC (Error Correcting Code).