GD9AS8GxE3A

FEATURES

◆ Single level cell technology ◆ Operating Current

- Read(Typ): 15mA

◆ ONFI 1.0 Compatible - Program(Typ): 15mA

- Erase(Typ): 15mA

◆ Power Supply Voltage - Standby(Max):50uA (CMOS)

- VCC/VCCQ = 1.7 ~ 1.95v(GD9AS)

- VCC/VCCQ = 2.7 ~ 3.6v (GD9AU) ◆ Reliability

- P/E cycles with ECC: 100K

◆ Memory Cell Organization - Data retention: 10 Years 

- Page size: 

X8: 2K + 64bytes ◆ Internal ECC

X16: 1K + 32words - 4bit/528 bytes

- Block size: 64 pages

X8: 128K + 4K bytes ◆ Operating Temperature

X16: 64K + 2K words - Industrial: -40C ~ 85C

- Plane size: 2048 blocks

- Device size: ◆ Chip Enable Don’t Care Option

4Gb: 4096 blocks

8Gb: 8192 blocks ◆ Security

16Gb: 16384 blocks - OTP area

- UID

◆ Page Read / Program time

- Random Read Time with ECC enable: 50us Max. ◆ Package

- Sequential Access Time - TSOPI48 12mm x 20mm

3.3v Device: 20ns Min. - FBGA63 9mm x 11mm

1.8v Device:25ns Min.

- Page Program with ECC enable: 400us Typ.

◆ Block Erase

- Block Erase Time: 3ms Typ.

Note: 1. ECC on is default, which can enable/disable by user after power-on.

GENERAL DESCRIPTION

GigaDevice GD9Ax4GxF3A/GD9Ax8GxE3A/GD9AxAGxD3A is 4Gbit/8Gbit/16Gbit capacity. A program operation can be 

performed in typical tPROG on the whole page and an erase operation can be performed in typical tBERS on each block. 

Data in the page can be read out at tRC cycle time per byte. The I/O pins serve as the ports for address and data input/output 

as well as command input. GD9Ax4GxF3A/GD9Ax8GxE3A/GD9AxAGxD3A provides extended reliability of 100K 

program/erase cycles with ECC (Error Correcting Code).