FX5625（5G射频前端解决方案）

Description

The FX5625 is a 42-pin power amplifier module developed for high linearity applica­tions. With 

advanced lnGaP HBT technology, the module supports multi-band LTE&5G NR application,  

including FDD-LTE&5G-NR  Band 7. TDD-LTE &5G-NR  Band 38, 41. The FX5625 meets the 

stringent linearity requirements of LTE QPSK and 5G NR OFT-s-OFDM & CP-OFDM specifications. 

The FX5625 is self contained with a GaAs power amplifiers for high band, a CMOS controller, a 

3P4T switch and input & output matching networks. The GaAs PA provides RF amplification in 

linear mode, while the CMOS controller provides regulated voltage through MIPI RFFE interface. 

The integrated SOI switch supports  band selection. The module is fully matched to 50 ohms at all

 RF ports.  

With Lansus's state-of-the-art technology and optimized bias table, the FX5625 reduces current 

consumption significantly in both high and low power operations. Compatible with APT(Average 

Power Tracking) technology to extend battery life，the FX5625 efficiency can be further improved 

with VCC supplied from DC-DC converter, which can be set from 0.55~4.6V accordingly to different

output power level. 

 Packaged in a 4mm x 6.8mm x 0.75mm module, the FX5625 performs with high efficiency, high 

linearity, low temperature variation, strong reliability and robust ruggedness. In addition to the 

feature  of RoHS compliant, the FX5625 is free of hazardous substances and rated as green product.

Featues

• 5G NR Power Class 2 operation

• LTE Power Class 2 High Power User Equipment (HPUE) operation

• FDD Band 7

• TDD Bands 38, 41

• QPSK & 16QAM & 64QAM & 256QAM & DFT-s-OFDM & CP-OFDM

• MIPI RFFE 2.1 Applications

• Integrated output switch

• Compact size 4mm x 6.8mm

• Low profile 0.75mm typically

• ESD Class 1C

• MSL rating level 3

• Green product