FX5331（5G射频前端解决方案）

Description

Packaged in a compact 2mm x 2.5mm x 0.842mm module, the FX5331 performs with 

high efficiency, high linearity, low temperature variation, strong reliability and robust 

ruggedness. In addition to the feature of RoHS compliant, the FX5331 is free of hazardous 

substances and rated as green product.

The FX5331 is a 10-pin power amplifier module developed for LTE and NR applications. 

With advanced InGaP HBT technology, the module supports multiband bands applications. 

Included B1/n1(1920-1980MHz), B2/n2(1850-1910MHz), B3/n3(1710-1785MHz), B4/n4

(1710-1755MHz), B25/n25(1850-1915MHz), B66/n66(1710-1780MHz), B34(2010-2025MHz) 

and B39(1880-1920MHz). The FX5331 meets the stringent linearity requirements of Both 

LTE QPSK and NR DFTS-OFDM, CP-OFDM specifications, as well as those of 256QAM 

modulation.

The FX5331 is self contained with a GaAs power amplifier, a bias controller, input & output 

matching networks. The GaAs PA provides RF amplification in linear mode, while the 

integrated bias controller provides regulated voltage according to MIPI2.1 RFFE interface, 

which can be compatible with most of mobile handset or data device solutions. The module

is fully matched to 50 ohms at all RF ports.

With Lansus's state-of-the-art technology and optimized bias table, the FX5331 reduces 

current consumption significantly in both high and low power operations. Compatible with 

ET(Envelope Tracking) and APT (Average Power Tracking) technology to extend battery life,

the FX5331 efficiency can be further improved.

The FX5331 is rated to Moisture Sensitivity Level 3(MSL3) at 260°C per JEDEC J-STD-020.

Featues

• LTE Band 1/2/3/4/25/66/34/39

• NR n1/n2/n3/n4/n25/n66

• Compatible with ET/APT

• Bandwidth 1.4MHz to 20MHz

• Up to 273 Resource Block

• Supply Voltage 3.0V-3.8V

• High efficiency

• Good Linearity

• MIPI2.1 RFFE interface

• Compact size 2mm x 2.5mm

• Low profile 0.842mm typically

• ESD Class 1C

• MSL rating level 3

• Green product