FX5566（5G射频前端解决方案）

Description

FX5566 power amplifier module (PAM) is designed for quad-band GSM/GPRS/EDGE (GSM850/EGSM900/DCS1800/PCS1900) application. The FX5566 consists of a GaAs HBT power amplifier and a CMOS controller chip. The CMOS controller provides PA bias and product identification read-back capability and is fully programmable through the RF Front-End Mobile Industry Processor Interface (RFFE MIPI).The PAM works in saturated mode for GMSK, as well as in linear mode for EDGE 8PSK . With delicately designed internal low-pass filters, this module provides excellent harmonic suppressions in all operating frequencies. The PAM also guarantees robust 8kV high ESD protection for the antenna port.

Housed in a compact 3.5mmx3.5mmx0.84mm package, the FX5566 greatly lowers the front-end complexity of multi-mode GSM/GPRS/EDGE solution, facilitates the customer’s implementation, and saves board room and cost significantly.

Featues

•High efficiency

•Programmable bias for improved backed-off linearity

•High linearity

•MIPI 2.1

•Low standby leakage

•Compatible with DC-DC converter

•MSL rating level 3

•Green product