CTH10003NS-T52

Features 

 Drain-Source Breakdown Voltage VDSS 30V

 Drain-Source On-Resistance

RDS(ON) 2.6m, at VGS= 10V, ID= 20A

RDS(ON) 3.3m, at VGS= 4.5V, ID= 20A

 Continuous Drain Current at TC=25℃ID =100A

 Advanced high cell density Trench Technology

 RoHS Compliance & Halogen Free

Applications 

 DC/DC converters

 Motor Drivers

 Power Management

Description

The CTH1003NS-T52 is the N-Channel logic 

enhancement mode power field effect transistors 

are produced using high cell density DMOS trench 

technology. This high density process is especially 

tailored to minimize on-state resistance