CTH7003NS-T52

Features 

• Drain-Source Breakdown Voltage VDSS 30V

• Drain-Source On-Resistance 

RDS(ON) 4.3mΩ, at VGS= 10V, ID= 20A 

RDS(ON) 6mΩ, at VGS= 4.5V, ID= 20A

• Continuous Drain Current at TC=25℃ ID =70.7A

• Advanced high cell density Trench Technology 

• RoHS Compliance & Halogen Free 

Applications 

• DC/DC Converter 

• Power Management 

• Load Switch

Description 

The CTH7003NS-T52 is the N-Channel logic 

enhancement mode power field effect transistors 

are produced using high cell density, DMOS trench 

technology. This high density process is especially

tailored to minimize on-state resistance. These 

devices are particularly suited for low voltage 

application.