CTH2204NS-T52

Features 

 Drain-Source Breakdown Voltage VDSS 40V

 Drain-Source On-Resistance

RDS(ON) 22mΩ, at VGS= 10, ID= 12A

RDS(ON) 40mΩ, at VGS= 4.5, ID= 6A

 Continuous Drain Current at TC =25℃ ID =22A

 Advanced high cell density Trench Technology

 RoHS Compliance & Halogen Free

Applications 

 Switching Applications

 DC/DC Converter 

 IPC

Description

The CTH2204NS-T52 is the N-Channel logic 

enhancement mode power field effect transistors 

are produced using high cell density, DMOS trench 

technology. This high density process is especially 

tailored to minimize on-state resistance.