GD25LE80E

FEATURES

◆ 8M-bit Serial Flash ◆ Fast Program/Erase Speed

 - 1024K-Byte - Page Program time: 0.4ms typical

 - 256 Bytes per programmable page - Sector Erase time: 40ms typical

 - Block Erase time: 0.15s/0.2s typical

◆ Standard, Dual, Quad SPI, QPI - Chip Erase time: 2.2s typical

 - Standard SPI: SCLK, CS#, SI, SO, WP#, HOLD#

 - Dual SPI: SCLK, CS#, IO0, IO1, WP#, HOLD# ◆ Flexible Architecture

 - Quad SPI: SCLK, CS#, IO0, IO1, IO2, IO3 - Uniform Sector of 4K-Byte

 - QPI: SCLK, CS#, IO0, IO1, IO2, IO3 - Uniform Block of 32/64K-Byte

◆ High Speed Clock Frequency ◆ Low Power Consumption

 - 133MHz for fast read with 30PF load - 10μA typical standby current

 - Dual I/O Data transfer up to 266Mbits/s - 0.2μA typical deep power down current

 - Quad I/O Data transfer up to 532Mbits/s

 - QPI Mode Data transfer up to 532Mbits/s ◆ Advanced Security Features

 - 128-bit Unique ID for each device

◆ Software/Hardware Write Protection - Serial Flash Discoverable parameters (SFDP) register

 - Write protect all/portion of memory via software - 3x1024-Byte Security Registers With OTP Locks

 - Enable/Disable protection with WP# Pin

 - Top/Bottom Block protection ◆ Single Power Supply Voltage

 - Full voltage range: 1.65-2.0V

◆ Endurance and Data Retention

 - Minimum 100,000 Program/Erase Cycles ◆ Package Information

 - 20-year data retention typical

- SOP8 150mil

- USON8 (3x2mm, 0.45mm thickness)

 - WLCSP 4-4 ball array

◆ Allows XiP (eXecute In Place) Operation

 - High speed Read reduce overall XiP instruction fetch time

 - Continuous Read with Wrap further reduce data latency to

 fill up SoC cache

GENERAL DESCRIPTIONS

The GD25LE80E (8M-bit) Serial flash supports the standard Serial Peripheral Interface (SPI), and the Dual/Quad SPI: 

Serial Clock, Chip Select, Serial Data I/O0 (SI), I/O1 (SO), I/O2 (WP#), I/O3 (HOLD#). The Dual I/O data is transferred 

with speed of 266Mbit/s, and the Quad I/O data is transferred with speed of 532Mbit/s.