DHS020N04E

Description

These N-channel enhancement mode power mosfets used

advanced Splite gate technology design, provided

excellent Rdson and low gate charge. Which accords with

the RoHS standard.

Features

● Fast switching

● Low on resistance

● Low gate charge

● High avalanche current

● Low reverse transfer capacitances

● 100% single pulse avalanche energy test

● 100% ΔVDS test

Applications

● Power switching applications

● Inverter management system

● Power tools

● Automotive electronics