ART2K0FEG

General description

Based on Advanced Rugged Technology (ART), this 2000 W LDMOS RF power transistor has been designed to cover a wide range of applications for ISM, broadcast and communications. The unmatched transistor has a frequency range of 1 MHz to 400 MHz.

Features and benefits

 High breakdown voltage enables class E operation up to VDS = 53 V

 Qualified up to a maximum of VDS = 65 V

 Characterized from 30 V to 65 V to support a wide range of applications

 Integrated dual sided ESD protection enables class C operation and complete switch off of the transistor

 Excellent ruggedness with no device degradation

 High efficiency

 Excellent thermal stability

 Designed for broadband operation

 For RoHS compliance see the product details on the Ampleon website