GD25WQ16E

FEATURES

◆ 16M-bit Serial Flash ◆ Fast Program/Erase Speed

 - 2048K-Byte - Page Program time: 1ms typical

 - 256 Bytes per programmable page - Sector Erase time: 100ms typical

 - Block Erase time: 0.3s/0.5s typical

◆ Standard, Dual, Quad SPI - Chip Erase time: 10s typical

 - Standard SPI: SCLK, CS#, SI, SO, WP#, HOLD#

 - Dual SPI: SCLK, CS#, IO0, IO1, WP#, HOLD# ◆ Flexible Architecture

 - Quad SPI: SCLK, CS#, IO0, IO1, IO2, IO3 - Uniform Sector of 4K-Byte

 - Uniform Block of 32/64K-Byte

◆ High Speed Clock Frequency

 - 104MHz for fast read with 30PF load ◆ Low Power Consumption

 - Dual I/O Data transfer up to 208Mbits/s - 11μA typical standby current

 - Quad I/O Data transfer up to 416Mbits/s - 0.1μA typical deep power down current

◆ Software/Hardware Write Protection ◆ Advanced Security Features

 - Write protect all/portion of memory via software - 128-bit Unique ID for each device

 - Enable/Disable protection with WP# Pin - Serial Flash Discoverable parameters (SFDP) register

 - Top/Bottom Block protection - 2x1024-Byte Security Registers With OTP Locks

◆ Endurance and Data Retention ◆ Single Power Supply Voltage

 - Minimum 100,000 Program/Erase Cycles - Full voltage range: 1.65-3.6V

 - 20-year data retention typical

◆ Package Information

◆ Allows XiP (eXecute in Place) Operation - SOP8 150mil

 - High speed Read reduce overall XiP instruction fetch time - SOP8 208mil

 - Continuous Read with Wrap further reduce data latency to - USON8 (3x2mm, 0.45mm thickness)

 fill up SoC cache - USON8 (3x4mm)

GENERAL DESCRIPTIONS

The GD25WQ16E (16M-bit) Serial flash supports the standard Serial Peripheral Interface (SPI), and the Dual/Quad SPI: 

Serial Clock, Chip Select, Serial Data I/O0 (SI), I/O1 (SO), I/O2 (WP#), I/O3 (HOLD#). The Dual I/O data is transferred 

with speed of 208Mbit/s, and the Quad I/O data is transferred with speed of 416Mbit/s.