UM6K1N 2.5V Drive Nch+Nch MOSFET

Structure 

Silicon N-channel MOS FET

Features

1) Two 2SK3018 transistors in a single UMT package.

2) The MOS FET elements are independent, eliminating

    mutual interference.

3) Mounting cost and area can be cut in half.

4) Low On-resistance.

5) Low voltage drive (2.5V drive) makes this device ideal for

    portable equipment.

Applications 

Interfacing, switching (30V, 100mA)

规格书um6k1n